RJP60V0DPM-80 查看數據表（PDF） - Renesas Electronics

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RJP60V0DPM-80

600V - 22A - IGBT Application: Inverter

Renesas Electronics 

RJP60V0DPM-80

Preliminary

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min

Typ Max Unit

Test Conditions

Zero gate voltage collector current

Gate to emitter leak current

Gate to emitter cutoff voltage

Collector to emitter saturation voltage

Input capacitance

Output capacitance

Reveres transfer capacitance

ICES

IGES

VGE(off)

VCE(sat)

VCE(sat)

Cies

Coes

Cres

—

—

1

—

—

±1

5.5

—

7.5

—

1.5

2.1

—

1.9

—

—

1080

—

—

58

—

—

42

—

μA VCE = 600 V, VGE = 0

μA VGE = ±30 V, VCE = 0

V

VCE = 10 V, IC = 1 mA

V

IC = 22 A, VGE = 15 V Note3

V

IC = 45 A, VGE = 15 V Note3

pF VCE = 25 V

pF

VGE = 0

pF f = 1 MHz

Total gate charge

Gate to emitter charge

Gate to collector charge

Qg

—

75

—

nC VGE = 15 V

Qge

—

10

—

nC VCE = 300 V

Qgc

—

45

—

nC IC = 22 A

Switching time

Short circuit withstand time

td(on)

—

45

—

ns VCE = 300 V, VGE = 15 V

tr

—

40

—

ns IC = 22 A

td(off)

—

100

—

ns Rg = 5 Ω

tf

—

70

—

ns Inductive load

tsc

—

6

—

μs VCC ≤ 360 V , VGE = 15 V

Tc = 100 °C

Notes: 3. Pulse test.

R07DS1036EJ0200 Rev.2.00

Apr 02, 2014

Page 2 of 7

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