STK12C68-5 查看數據表（PDF） - Cypress Semiconductor
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STK12C68-5 Datasheet PDF : 18 Pages
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STK12C68-5 (SMD5962-94599)
AC Switching Characteristics
SRAM Read Cycle
Parameter
Cypress
Parameter
Alt
tACE
tRC [7]
tAA [8]
tDOE
tOHA [8]
tLZCE [9]
tHZCE [9]
tLZOE [9]
tHZOE [9]
tPU [6]
tPD [6]
tELQV
tAVAV, tELEH
tAVQV
tGLQV
tAXQX
tELQX
tEHQZ
tGLQX
tGHQZ
tELICCH
tEHICCL
Switching Waveforms
Description
Chip Enable Access Time
Read Cycle Time
Address Access Time
Output Enable to Data Valid
Output Hold After Address Change
Chip Enable to Output Active
Chip Disable to Output Inactive
Output Enable to Output Active
Output Disable to Output Inactive
Chip Enable to Power Active
Chip Disable to Power Standby
35 ns
Min
Max
35
35
35
15
5
5
10
0
10
0
35
55 ns
Min
Max
55
55
55
35
5
5
12
0
12
0
55
Figure 8. SRAM Read Cycle 1: Address Controlled [7, 8]
W5&
$''5(66
W$$
W2+$
'4 '$7$287
'$7$9$/,'
$''5(66
&(
2(
'4 '$7$287
Figure 9. SRAM Read Cycle 2: CE and OE Controlled [7]
W5&
W/=&(
W$&(
W3'
W+=&(
W'2(
W/=2(
W+=2(
'$7$9$/,'
W38
$&7,9(
,&&
67$1'%<
Notes
7. WE and HSB must be High during SRAM Read cycles.
8. Device is continuously selected with CE and OE both Low.
9. Measured ±200 mV from steady state output voltage.
Document Number: 001-51026 Rev. **
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Page 9 of 18
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