MJ2501 查看數據表（PDF） - Inchange Semiconductor

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MJ2501

Silicon PNP Darlingtion Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlingtion Power Transistor

isc Product Specification

MJ2501

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -100mA; IB= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB=B -20mA

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -50mA

VBE(on) Base-Emitter On voltage

IC= -5A ; VCE= -3V

ICEO

Collector Cutoff current

ICER

Collector Cutoff current

IEBO

Emitter Cut-off current

VCE= -40V; IB=B 0

VCE= -80V; RBE= 1.0kΩ

VCE= -80V; RBE= 1.0kΩ, TC=150℃

VEB= -5V; IC= 0

hFE

DC Current Gain

IC= -5A ; VCE= -3V

MIN MAX UNIT

-80

V

-2.0

V

-4.0

V

-3.0

V

-1.0

mA

-1.0

-5.0

mA

-2.0

mA

1000

isc Website：www.iscsemi.cn

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