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M74HCT258 查看數據表(PDF) - STMicroelectronics

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M74HCT258 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
M74HCT258
CAPACITIVE CHARACTERISTICS
Test Condition
Value
Symbol
Parameter
VCC
(V)
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
CIN Input Capacitance
5 10
10
10 pF
COUT
Output
Capacitance
10
pF
CPD Power Dissipation
Capacitance (note
33
pF
1)
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/4 (per
Channel)
TEST CIRCUIT
TEST
tPLH, tPHL
tPZL, tPLZ
tPZH, tPHZ
CL = 50pF/150pF or equivalent (includes jig and probe capacitance)
R1 = 1Kor equivalent
RT = ZOUT of pulse generator (typically 50)
SWIT CH
Open
VCC
GND
5/10

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