IRF5806(2000) 查看數據表（PDF） - International Rectifier

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IRF5806
(Rev.:2000)

HEXFET® Power MOSFET

International Rectifier 

q Trench Technology

q Ultra Low On-Resistance

q P-Channel MOSFET

q Available in Tape & Reel

VDSS

-20V

PD - 93997

IRF5806

HEXFET® Power MOSFET

RDS(on) max

86mΩ@VGS = -4.5V

147mΩ@VGS = -2.5V

ID

-4.0A

-3.0A

Description

New trench HEXFET® Power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance

per silicon area. This benefit, combined with the

ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in battery and load management applications.

D

1

A

6

D

D

2

5

D

G

3

4

S

Top V ie w

Micro6™

Absolute Maximum Ratings

Parameter

VDS

ID @ TA = 25°C

ID @ TA = 70°C

IDM

PD @TA = 25°C

PD @TA = 70°C

Drain-Source Voltage

Continuous Drain Current, VGS @ -4.5V

Continuous Drain Current, VGS @ -4.5V

Pulsed Drain Current

Maximum Power Dissipationƒ

Maximum Power Dissipationƒ

Linear Derating Factor

VGS

TJ , TSTG

Gate-to-Source Voltage

Junction and Storage Temperature Range

Thermal Resistance

Parameter

RθJA

Maximum Junction-to-Ambientƒ

www.irf.com

Max.

-20

-4.0

-3.3

-16.5

2.0

1.3

0.02

± 20

-55 to + 150

Units

V

A

W

W

W/°C

V

°C

Max.

62.5

Units

°C/W

1

10/04/00

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