BAS216 查看數據表（PDF） - NXP Semiconductors.
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BAS216 Datasheet PDF : 9 Pages
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NXP Semiconductors
High-speed switching diode
GRAPHICAL DATA
500
P tot
(mW)
250
MSA570
300
handbook, halfpage
IF
(mA)
200
100
Product data sheet
BAS216
MBG382
(1)
(2) (3)
0
0
100
Tamb (oC)
200
Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible total power
dissipation as a function of ambient
temperature.
102
handbook, full pagewidth
IFSM
(A)
10
0
0
1
VF (V)
2
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig.3 Forward current as a function of forward
voltage.
MBG704
1
10−1
1
10
102
103
tp (µs)
104
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2002 May 28
4
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