BSB012NE2LX 查看數據表（PDF） - Infineon Technologies

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BSB012NE2LX

n-Channel Power MOSFET

Infineon Technologies 

OptiMOS™ Power-MOSFET

BSB012NE2LX

Electrical characteristics

Table 6 Gate charge characteristics1)

Parameter

Symbol

Gate to source charge

Gate charge at threshold

Gate to drain charge

Switching charge

Gate charge total

Gate plateau voltage

Gate charge total

Qgs

Qg(th)

Qgd

Qsw

Qg

Vplateau

Qg

Min.

-

-

-

-

-

-

-

Gate charge total, sync. FET

Qg(sync)

-

Output charge

Qoss

-

1) See figure 16 for gate charge parameter definition

Values

Typ.

12

7.9

7.2

11

32

2.4

67

Max.

-

-

-

-

-

-

-

28

-

35

-

Unit

nC

Note /

Test Condition

VDD=12 V,

ID=30 A,

VGS=0 to 4.5 V

V

nC VDD=12 V,

ID=30 A,

VGS=0 to 10V

VDS=0.1 V,

VGS=0 to 4.5 V

VDD=12 V, VGS=0 V

Table 7 Reverse diode characteristics

Parameter

Symbol

Diode continuous forward current

Diode pulse current

Diode forward voltage

Is

IS,pulse

VSD

Min.

-

-

-

Reverse recovery charge

Qrr

-

Values

Typ.

-

-

0.8

Max.

57

228

1

20

-

Unit Note /

Test Condition

A

TC=25 °C

V

VGS=0 V, IF=30 A,

Tj=25 °C

nC VR=15 V, IF=Is,

diF/dt=400 A/µs

Final Data Sheet

4

2.0, 2011-03-18

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