2SC4784 查看數據表（PDF） - Renesas Electronics

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2SC4784

Silicon NPN Epitaxial Transistor

Renesas Electronics 

2SC4784

Electrical Characteristics

Item

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector output capacitance

Gain bandwidth product

Power gain

Noise figure

Symbol

ICBO

ICEO

IEBO

hFE

Cob

fT

PG

NF

Min

—

—

—

50

—

7.0

12.0

—

Typ

—

—

—

120

0.45

10.0

15.0

1.2

Max

10

1

10

250

0.8

—

—

2.5

Unit

µA

mA

µA

pF

GHz

dB

dB

(Ta = 25°C)

Test conditions

VCB = 15 V, IE = 0

VCE = 8 V, RBE = ∞

VEB = 1.5 V, IC = 0

VCE = 5 V, IC = 10 mA

VCB = 5 V, IE = 0, f = 1 MHz

VCE = 5 V, IC = 10 mA

VCE = 5 V, IC = 10 mA,

f = 900 MHz

VCE = 5 V, IC = 5 mA,

f = 900 MHz

Rev.3.00 Aug 10, 2005 page 2 of 8

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