DS1217M 查看數據表（PDF） - Maxim Integrated
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DS1217M Datasheet PDF : 8 Pages
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POWER-DOWN/POWER-UP CONDITION
DS1217M Nonvolatile Read/Write Cartridge
POWER-DOWN/POWER-UP TIMING
(TA = 0°C to +70°C)
PARAMETER
SYMBOL
CONDITIONS
CE at VIH Before Power-Down
tPD
(Note 9)
VCC Slew from 4.5V to 0
(CE at VIH)
tF
VCC Slew from 0 to 4.5V
(CE at VIH)
tR
CE at VIH After Power-Up
tREC
(Note 9)
(TA = +25°C)
PARAMETER
Expected Data Retention
Time
SYMBOL
CONDITIONS
tDR
(Note 10)
MIN
TYP
MAX UNITS
0
s
100
s
0
s
2
125
ms
MIN
TYP
MAX UNITS
5
years
WARNING: Under no circumstances are negative undershoots of any amplitude allowed when the device is in
battery-backup mode.
Note 4:
Note 5:
Note 6:
Note 7:
Note 8:
Note 9:
Note 10:
WE is high for a read cycle.
OE = VIH or VIL. If OE = VIH during a write cycle, the output buffers remain in a high-impedance state.
If the CE low transition occurs simultaneously with or later than the WE high transition in Write Cycle 1, that output buffers remain in
a high-impedance state in this period.
If the CE high transition occurs prior to or simultaneously with the WE high transition in Write Cycle 1, the output buffers remain in a
high-impedance state in this period.
If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition, the output buffers remain in a high-
impedance state in this period.
Removing and installing the cartridge with power applied may disturb data.
Each DS1217M I smarked with a 4-digit code AABB. AA designates the year of manufacture. BB designates the week of
manufacture. The expected tDR is defined as starting at the date of manufacture. This parameter is assured by component selection,
process control, and design. It is not measured directly during production testing.
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