BTS129 查看數據表（PDF） - Siemens AG
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BTS129 Datasheet PDF : 8 Pages
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Typ. transfer characteristic
ID = f (VGS)
Parameter: tp = 80 µs, VDS = 25 V
BTS 129
Typ. transconductance gfs = f (ID)
Parameter: tp = 80 µs, VDS = 25 V
Gate threshold voltage VGS(th) = f (Tj)
Parameter: VDS = VGS, ID = 1 mA
Continuous drain current ID = f (TC)
Parameter: VGS ≥ 10 V
Semiconductor Group
6
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