25Q32BVAIG 查看數據表（PDF） - Winbond

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25Q32BVAIG

3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI

Winbond 

W25Q32BV

7.2.2 Instruction Set Table 1 (Erase, Program Instructions)(1)

INSTRUCTION NAME

BYTE 1

(CODE)

BYTE 2

BYTE 3

BYTE 4

Write Enable

06h

Write Enable for Volatile

50h

Status Register

Write Disable

Read Status Register-1

Read Status Register-2

04h

05h

(S7–S0) (2)

35h

(S15-S8) (2)

Write Status Register

01h

(S7–S0)

(S15-S8)

Page Program

02h

A23–A16

A15–A8

A7–A0

Quad Page Program

32h

A23–A16

A15–A8

A7–A0

Sector Erase (4KB)

20h

A23–A16

A15–A8

A7–A0

Block Erase (32KB)

52h

A23–A16

A15–A8

A7–A0

Block Erase (64KB)

D8h

A23–A16

A15–A8

A7–A0

Chip Erase

C7h/60h

Erase / Program Suspend

75h

Erase / Program Resume

7Ah

Power-down

B9h

Continuous Read Mode

Reset (4)

FFh

FFh

BYTE 5

BYTE 6

(D7–D0)

(D7–D0, …)(3)

Notes:

1. Data bytes are shifted with Most Significant Bit first. Byte fields with data in parenthesis “()” indicate data being

read from the device on the DO pin.

2. The Status Register contents will repeat continuously until /CS terminates the instruction.

3. Quad Page Program Input Data:

IO0 = (D4, D0, ……)

IO1 = (D5, D1, ……)

IO2 = (D6, D2, ……)

IO3 = (D7, D3, ……)

4. This instruction is recommended when using the Dual or Quad “Continuous Read Mode” feature. See section

7.2.19 & 7.2.20 for more information.

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