BU505 查看數據表（PDF） - Philips Electronics
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BU505 Datasheet PDF : 12 Pages
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Philips Semiconductors
Silicon diffused power transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
ICsat
IC
ICM
IB
IBM
Ptot
Tstg
Tj
collector-emitter peak voltage
collector-emitter voltage
collector saturation current
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
total power dissipation
storage temperature
junction temperature
VBE = 0
open base
see Fig.3
see Fig.3
Tmb ≤ 25 °C; see Fig.4
Product specification
BU505; BU505D
MIN.
−
−
−
−
−
−
−
−
−65
−
MAX.
1 500
700
2
2.5
4
2
4
75
+150
150
UNIT
V
V
A
A
A
A
A
W
°C
°C
10
handbook, full pagewidth
Zth j−mb
(K/W)
1
δ=1
0.75
0.50
0.33
0.20
0.10
0.05
10−1
0.02
0.01
0
MGB859
10−2
10−2
10−1
1
10
Fig.2 Transient thermal impedance.
tp (ms)
102
1997 Aug 13
3
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