FDR8308P 查看數據表（PDF） - Fairchild Semiconductor
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FDR8308P Datasheet PDF : 8 Pages
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Typical Electrical Characteristics (continued)
5
I D = -3.2A
4
3
VDS= -5V
-15V
-10V
2
1
0
0
3
6
9
12
15
Qg , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
30
5
RDS(ON) LIMIT
100us
1001m0m1smss
0.5
VGS = -4.5V
SINGLE PULSE
0.05 RθJA = 156°C/W
TAA = 25°C
1s
DC
0.01
0.1 0.2
0.5
1
2
5
10
20 30
- VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
2500
Ciss
1000
400
Coss
200
Crss
100 f = 1 MHz
VGS = 0 V
50
0.1
0.3
1
3
10
20
-VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
40
R θJA= 156°C/W
TA = 25°C
30
20
10
0
0.0001 0.001
0.01
0.1
1
10
SINGLE PULSE TIME (SEC)
100 300
Figure 10. Single Pulse Maximum Power
Dissipation.
1
0.5 D = 0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.002
0.001
0.0001
0.001
0.01
0.1
1
t1 , TIME (sec)
R θJA (t) = r(t) * RθJA
R θJA = 156 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA (t)
Duty Cycle, D = t1/ t 2
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1.
Transient thermal response will change depending on the circuit board design.
FDR8308P Rev.C
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