1.6
1.2
S qua re wave:
0.8
60% of rated
v olta ge
I
0.4
Ideal diodes
0.0
0.1
IRG4RC10KD
For both:
Duty cycle: 50%
TJ = 125°C
Ts in k = 5950 °C
G ate drive as specified
P ow e r Dis sip ation = 1.4W
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
TJ = 25 °C
10
TJ = 150 °C
VGE = 15V
20µs PULSE WIDTH
1
1.0
2.0
3.0
4.0
5.0
6.0
7.0
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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10
TJ = 150 °C
TJ = 25 °C
VCC = 50V
5µs PULSE WIDTH
1
5
10
15
20
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3