FA01215 查看數據表（PDF） - MITSUBISHI ELECTRIC
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FA01215 Datasheet PDF : 2 Pages
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TYPICAL CHARACTERISTICS (Ta=25˚C)
OUTPUT POWER, TOTAL EFFICIENCY
vs INPUT POWER
40
90
VD=3.0V
35 VG=-2.0V
PO
80
f=902.5MHz
30
70
25
60
20
50
ηT
15
40
10
30
5
20
0
10
-5
0
-30 -25 -20 -15 -10 -5 0 5 10 15
INPUT POWER Pin(dBm)
MITSUBISHI SEMICONDUCTOR GaAs FET
FA01215
GaAs FET HYBRID IC
EQUIVALENT CIRCUIT
1ST GATE
2ND GATE
1ST DRAIN
2ND DRAIN
RF INPUT
MATCHING
CIRCUIT
MATCHING
CIRCUIT
MATCHING
CIRCUIT
RF OUTPUT
GND(FIN)
Nov. ´97
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