IN74HCT08A 查看數據表（PDF） - IK Semicon Co., Ltd

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IN74HCT08A

Quad 2-Input AND Gate High-Performance Silicon-Gate CMOS

IK Semicon Co., Ltd 

IN74HCT08A

AC ELECTRICAL CHARACTERISTICS (VCC=5.0 V ± 10%, CL=50pF,Input tr=tf=6.0 ns)

Symbol

Parameter

tPLH, tPHL

tTLH, tTHL

CIN

Maximum Propagation Delay, Input

A or B to Output Y

(Figures 1 and 2)

Maximum Output Transition Time,

Any Output (Figures 1 and 2)

Maximum Input Capacitance

Guaranteed Limits

25 °C to

-55°C

≤85°C

≤125°C Unit

19

24

28

ns

15

19

22

ns

10

10

10

pF

Power Dissipation Capacitance (Per

Gate)

Typical @25°C,VCC=5.0 V

CPD Used to determine the no-load

dynamic power consumption:

PD=CPDVCC2f+ICCVCC

20

pF

Figure 1. Switching Waveforms.

Figure 2. Test Circuit

EXPANDED LOGIC DIAGRAM

(1/4 of the Device)

Rev. 00

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