2SD1615(1995) 查看數據表（PDF） - NEC => Renesas Technology
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2SD1615 Datasheet PDF : 4 Pages
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TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2.5
2.0
1.5
1.0
0.5
without heatsink
0
40
80
120
160
200
TA – Ambient Temperature – ˚C
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
300 µA
200 µA
80
200 µA
60
150 µA
40
100 µA
20
IB = 50 µA
0
2
4
6
8
10
VCE – Collector to Emitter Voltage – V
1000
500
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 2.0 V
200
100
50
20
10
5
0.01 0.02 0.05 0.1 0.2 0.5 1 2
IC – Collector Current – A
5 10
2
2SD1615, 2SD1615A
SAFE OPERATING AREA
(TRANSIENT THERMAL RESISTANCE
METHOD)
5
1 pulse
2
1
0.5
200 ms
0.2
DC
0.1
0.05
0.02
0.01
12
5 10 20
50 100
VCE – Collector to Emitter Voltage – V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
1.0
5.0 mA
4.5 mA
4.0 mA 3.5 mA 3.0 mA
0.8
2.5 mA
2.0 mA
0.6
1.5 mA
0.4
1.0 mA
0.2
IB = 0.5 mA
0
0.2
0.4
0.6
0.8
1.0
VCE(sat) – Collector Saturation Voltage – V
COLLECTOR AND BASE SATURATION
VOLTAGE vs. COLLECTOR CURRENT
2
IC = 20·IB
1
VBE(sat)
0.5
0.2
0.1
0.05
0.02
VCE(sat)
0.01 0.02 0.05 0.1 0.2 0.5 1 2
IC – Collector Current – A
5 10
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