TIP160 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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TIP160 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Darlington Power Transistor
TIP160
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 320V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE (sat)= 2.9V(Max.)@ IC= 10A
APPLICATIONS
·Designed for use in automotive ignition, switching and
motor control applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
320
V
VCEO Collector-Emitter Voltage
320
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IB
Base Current- Continuous
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
1.0
A
125
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W
SPTECH website：www.superic-tech.com
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