RMWP38001 查看數據表（PDF） - Fairchild Semiconductor
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RMWP38001 Datasheet PDF : 8 Pages
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Typical Characteristics
26
24
22
20
18
16
14
12
10
8
6
4
2
0
35
RMWP38001, 38 GHz Power Amplifier, Typical On-Wafer Measurements,
Vd = 4V, Idq = 250mA
S21
S22
S11
35.5
36
36.5
37
37.5
38
38.5
39
39.5
FREQUENCY (GHz)
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-22
-24
-26
40
RMWP38001 Typical On-Wafer Output Power at 1dB Gain
Compression Measurements at Vd = 4V, Idq = 290mA
30
25
20
15
10
5
0
37
37.5
38
38.5
39
39.5
40
FREQUENCY (GHz)
©2004 Fairchild Semiconductor Corporation
RMWP38001 Rev. C
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