Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS 500
Gate to source leak current
I GSS
—
Zero gate voltage drain current IDSS
—
Gate to source cutoff voltage VGS(off) 3.0
Static drain to source on state RDS(on) —
resistance
Forward transfer admittance |yfs|
3.0
Input capacitance
Ciss
—
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
td(on) —
Rise time
tr
—
Turn-off delay time
td(off) —
Fall time
tf
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Body-drain diode forward
voltage
VDF
—
Body-drain diode reverse
trr
—
recovery time
Body-drain diode reverse
recovery charge
Qrr
—
Note: 4. Pulse test
Typ
—
—
—
—
1.1
4.5
580
70
13
20
15
65
15
15
3
8
0.85
400
1.5
Max
—
±0.1
1
4.0
1.5
—
—
—
—
—
—
—
—
—
—
—
1.3
—
—
Unit
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µC
2SK3233
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 500 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 2.5 A, VGS = 10 V Note4
ID = 2.5 A, VDS = 10 V Note4
VDS = 25 V
VGS = 0
f = 1 MHz
ID = 2.5 A
VGS = 10 V
RL = 100 Ω
Rg = 10 Ω
VDD = 400 V
VGS = 10 V
ID = 5 A
IF = 5 A, VGS = 0
IF = 5 A, VGS = 0
diF/dt = 100 A/µs
3