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BFP720F Datasheet PDF - Infineon Technologies

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  2009  
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BFP720F Datasheet PDF : BFP720F pdf     
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Product Brief
The BFP720F is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4.0 V and currents up to IC = 25 mA. The device is especially suited for mobile applications in which low power consumption is a key requirement. The typical transition frequency is approximately 45 GHz, hence the device offers high power gain at frequencies up to 12 GHz in amplifier applications. The device is housed in a thin small flat plastic package with visible leads.

Features
• High performance general purpose wideband LNA transistor
• Operation voltage: 1.0 V to 4.0 V
• Transistor geometry optimized for low current applications
• 26.5 dB maximum stable gain at 1.9 GHz and only 13 mA
• 15 dB maximum available gain at 10 GHz and only 13 mA
• 0.7 dB minimum noise figure at 5.5 GHz and 1.0 dB at 10 GHz
• High linearity OP1dB = 7 dBm and OIP3 = 21 dBm at 5.5 GHz
   and low current consumption of 13 mA
• Thin small flat Pb-free (RoHS compliant) and halogen-free
   package with visible leads
• Qualification report according to AEC-Q101 available

Applications
   FM Radio, Mobile TV, RKE, AMR, Cellular, ZigBee, GPS, WiMAX, SDARs, Satellite Radio, Bluetooth, WiFi, Cordless phone, UMTS, WLAN, UWB, LNB

 

零件编号
产品描述 (功能)
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生产厂家
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