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BFP740F Datasheet PDF - Infineon Technologies

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BFP740F Datasheet PDF : BFP740F pdf     
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Product Brief
The BFP740F is a linear very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCE = 4 V and currents up to IC = 45 mA. With its high linearity at currents as low as 10 mA (see Fig. 5-8) the device supports energy efficient designs. The typical transition frequency is approximately 45 GHz, hence the device offers high power gain at frequencies up to 10 GHz in amplifier applications. The device is housed in a thin small flat plastic package with visible leads.

• Very low noise amplifier based on Infineon´s reliable,
   high volume SiGe:C technology
• OIP3 = 24 dBm @ 5.5 GHz, 3 V, 15 mA
• High transition frequency fT = 45 GHz @ 3 V, 25 mA
• NFmin = 1.0 dB @ 5.5 GHz, 3 V, 6 mA
• Maximum power gain Gms = 21 dB @ 5.5 GHz, 3 V, 15 mA
• Low power consumption, ideal for mobile applications,
   very common in WLAN Wi-Fi applications
• Thin small flat Pb-free (RoHS compliant) and halogen-free
   package with visible leads
• Qualification report according to AEC-Q101 available

As Low Noise Amplifier (LNA) in
• Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n/ac, WiMAX 2.5/3.5/5.5 GHz, UWB, Bluetooth
• Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB
• Multimedia applications such as mobile/portable TV, CATV, FM Radio
• 3G/4G UMTS/LTE mobile phone applications
• ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
As discrete active mixer, amplifier in VCOs and buffer amplifier


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