MRFG35003N6AT1 Datasheet PDF - NXP Semiconductors.

3.5 GHz, 3 W, 6 V POWER FET GaAs PHEMT

Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications.

• Typical Single-Carrier W-CDMA Performance: VDD = 6 Volts, IDQ = 180 mA, Pout = 450 mWatts Avg., 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
   Power Gain — 10 dB
   Drain Efficiency — 27%
   ACPR @ 5 MHz Offset — -42.5 dBc in 3.84 MHz Channel Bandwidth
• 3 Watts P1dB @ 3550 MHz, CW

Features
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.