STB11NM60N-1 Datasheet PDF - STMicroelectronics
零件编号
产品描述 (功能)
生产厂家
STB11NM60N-1
STMicroelectronics
Description
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Features
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
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零件编号
产品描述 (功能)
PDF
生产厂家
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