STB45N10L Datasheet PDF - STMicroelectronics

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on) = 0.028 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100°C
■ LOW INPUT CAPACITANCE
■ LOW GATE CHARGE
■ LOW LEAKAGE CURRENT
■ APPLICATION ORIENTED CHARACTERIZATION
■ THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX "-1")
■ SURFACE-MOUNTING D2PACK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4")

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLY (SMPS)
■ CONSUMER AND INDUSTRIAL LIGHTING
■ DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY (UPS)