STW40N60M2(2014) Datasheet PDF - STMicroelectronics
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STW40N60M2
STMicroelectronics
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STW40N60M2 Datasheet PDF :
Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.
Features
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
• LLC converters, resonant converters
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