FMMT495 查看數據表（PDF） - Zetex => Diodes

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FMMT495

SOT23 NPN SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR

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SOT23 NPN SILICON PLANAR MEDIUM

POWER HIGH PERFORMANCE TRANSISTOR

ISSUE 3 - NOVEMBER 1995 7

PARTMARKING DETAIL – 495

FMMT495

E

C

B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

VEBO

Continuous Collector Current

IC

Peak Pulse Current

ICM

Base Current

IB

Power Dissipation at Tamb=25°C

Ptot

Operating and Storage Temperature Range

Tj:Tstg

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).

PARAMETER

SYMBOL MIN.

MAX.

170

V

150

V

5

V

1

A

2

A

200

mA

500

mW

-55 to +150

°C

UNIT CONDITIONS.

Breakdown Voltages

V(BR)CBO 170

V

VCEO(sus) 150

V

V(BR)EBO

5

V

Collector Cut-Off Currents

Emitter Cut-Off Current

Collector-Emitter

Saturation Voltage

ICBO

ICES

IEBO

VCE(sat)

100

nA

100

nA

100

nA

0.2

V

0.3

V

Base-Emitter

Saturation Voltage

VBE(sat)

1.0

V

IC=100µA

IC=10mA*

IE=100µA

VCB=150V

VCE=150V

VEB=4V

IC=250mA, IB=25mA*

IC=500mA, IB=50mA*

IC=500mA, IB=50mA*

Base-Emitter

Turn On Voltage

VBE(on)

1.0

V

IC=500mA, VCE=10V*

Static Forward Current

Transfer Ratio

Transition Frequency

hFE

100

100

300

50

10

IC=1mA, VCE=10V

IC=250mA, VCE=10V*

IC=500mA, VCE=10V*

IC=1A, VCE=10V*

fT

100

MHz

IC=50mA, VCE=10V

f=100MHz

Collector-Base

Cobo

Breakdown Voltage

10

pF

VCB=10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

3 - 123

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