BSP170 查看數據表（PDF） - Siemens AG

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BSP170

SIPMOS ® Small-Signal Transistor

Siemens AG 

BSP 170

Avalanche energy EAS = ƒ(Tj)

parameter: ID = -1.7 A, VDD = -25 V

RGS = 25 Ω, L = 3.23 mH

9

mJ

EAS

7

6

5

4

3

2

1

0

20 40 60 80 100 120 °C 160

Tj

Drain-source breakdown voltage

V(BR)DSS = ƒ(Tj)

-71

V

-68

V(BR)DSS

-66

-64

-62

-60

-58

-56

-54

-60

-20

20

60

100 °C 160

Tj

Semiconductor Group

8

22/05/1997

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