2N3906(1997) 查看數據表（PDF） - Fairchild Semiconductor
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2N3906 Datasheet PDF : 6 Pages
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2N3906
MMBT3906
C
BE
TO-92
PZT3906
C
SOT-223
E
C
B
C
SOT-23
Mark: 2A
E
B
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switching
applications at collector currents of 10 µA to 100 mA. Sourced
from Process 66.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
40
VCBO
Collector-Base Voltage
40
VEBO
Emitter-Base Voltage
5.0
IC
Collector Current - Continuous
200
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
© 1997 Fairchild Semiconductor Corporation
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