RFH12N35 查看數據表（PDF） - Intersil
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RFH12N35 Datasheet PDF : 5 Pages
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Data Sheet
RFH12N35, RFH12N40
October 1998 File Number 1630.2
12A, 350V and 400V, 0.380 Ohm,
N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17434.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFH12N35
TO-218AC
RFH12N35
RFH12N40
TO-218AC
RFH12N40
NOTE: When ordering, use the entire part number.
Features
• 12A, 350V and 400V
• rDS(ON) = 0.380Ω
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
DRAIN
JEDEC TO-218AC
SOURCE
DRAIN
GATE
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
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