HCF4536B(2002) 查看數據表（PDF） - STMicroelectronics
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HCF4536B Datasheet PDF : 13 Pages
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HCF4536B
DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns)
Symbol
Parameter
VDD (V)
tPLH tPHL Propagation Delay Time
5
(Clock to Q1, 8-Bypass
10
High)
15
Propagation Delay Time
5
(Clock to Q1, 8-Bypass
10
Low)
15
Propagation Delay Time
5
(Clock to Q16)
10
15
Propagation Delay Time
5
(Qn to Qn+1)
10
15
tPLH Propagation Delay Time
5
10
15
tPHL Reset to Qn
5
10
15
tTHL tTLH Transition Time
5
10
15
tW Pulse Width Clock
5
10
15
Set
5
10
15
Reset
5
10
15
Recovery Time Set
5
10
15
Reset
5
10
15
tr, tf Clock Input Rise or Fall
5
Time
10
15
fCL Maximum Clock Input
5
Frequency
10
15
(*) Typical temperature coefficient for all VDD value is 0.3 %/°C.
Test Condition
Value (*)
Unit
Min. Typ. Max.
1
2
0.5 1 µs
0.35 0.7
2.5 5
0.8 0.6 µs
0.6 1.2
4
8
1.5 3 µs
1
2
150 300
75 150 ns
50 100
300 600
125 250 ns
80 160
3
6
1
2 µs
0.75 1.5
100 200
50 100 ns
40 80
200 400
75 150 ns
50 100
200 400
100 200 ns
60 120
3
6
1
2 µs
0.75 1.5
2.5 5
1
2 µs
0.6 1.6
3.5 7
1.5 3 µs
1
2
Unlimited
µs
0.5 1
1.5 3
2.5 5
MHz
7/13
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