5962R9676601QXC 查看數據表（PDF） - Intersil

零件编号

产品描述 (功能)

比赛名单

5962R9676601QXC

Radiation Hardened 256 x 8 CMOS RAM

Intersil 

HS-81C55RH, HS-81C56RH

Die Characteristics

DIE DIMENSIONS:

222mils x 202mils x 14mils ± 1mil (Die Thickness)

INTERFACE MATERIALS:

Glassivation:

Type: SiO2

Thickness: 8kÅ ± 1kÅ

Top Metallization:

Type: AlSi

Thickness: 11kÅ ± 2kÅ

Substrate:

Radiation Hardened Silicon Gate,

Dielectric Isolation

Backside Finish:

Silicon

ASSEMBLY RELATED INFORMATION:

Substrate Potential:

Unbiased (DI)

Metallization Mask Layout

HS-81C55RH, HS-81C56RH

TIMER OUT (6)

IO/M (7)

CE OR CE (8)

RD (9)

WR (10)

ALE (11)

AD0 (12)

AD1 (13)

AD2 (14)

(34) PB5

(33) PB4

(32) PB3

(31) PB2

(30) PB1

(29) PB0

(28) PA7

(27) PA6

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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-

out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and

reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result

from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site www.intersil.com

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