5962R9674201QEC 查看數據表（PDF） - Intersil

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5962R9674201QEC

Radiation Hardened 8 Channel CMOS Analog Multiplexer with Overvoltage Protection

Intersil 

Die Characteristics

DIE DIMENSIONS:

83 mils x 108 mils x 19 mils

INTERFACE MATERIALS:

Glassivation:

Type: SiO2

Thickness: 8kÅ ±1kÅ

Top Metallization:

Type: AlCu

Thickness: 12.5kÅ ±2kÅ

Substrate:

CMOS

Dielectric Isolation

Metallization Mask Layout

IN3

IN4

OUT

IN8

IN7

IN6

HS-508ARH

Backside Finish:

Silicon

ASSEMBLY RELATED INFORMATION:

Substrate Potential:

Unbiased (DI)

ADDITIONAL INFORMATION:

Worst Case Current Density:

6.68e04 A/cm2

Transistor Count:

506

HS-508ARH

IN2 IN1 -V

EN

A0

A1

A2

IN5 +V GND

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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-

out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and

reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result

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For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

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