5962F9562601QXC 查看數據表（PDF） - Intersil

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5962F9562601QXC

Radiation Hardened 8kx8 CMOS PROM

Intersil 

Die Characteristics

DIE DIMENSIONS:

271milsx307milsx19mils ±1mils

INTERFACE MATERIALS:

Glassivation:

Type: SiO2

Thickness: 8kÅ ± 1kÅ

Top Metallization:

M1:6kÅ ±±1kÅ Si/Al/Cu

2kÅ ±±500Å TiW

M2:10kÅ ± 2kÅSi/Al/Cu

Metallization Mask Layout

HS-6664RH

ASSEMBLY RELATED INFORMATION:

Substrate Potential:

VDD

ADDITIONAL INFORMATION:

Worst Case Current Density:

2x105 A/cm2

Transistor Count:

110, 874

HS-6664RH

4

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