CD4011BMS 查看數據表（PDF） - Intersil

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产品描述 (功能)

比赛名单

CD4011BMS

CMOS NAND Gates

Intersil 

Specifications CD4011BMS, CD4012BMS, CD4023BMS

TABLE 6. APPLICABLE SUBGROUPS (Continued)

CONFORMANCE GROUP

MIL-STD-883

METHOD

GROUP A SUBGROUPS

Group B

Subgroup B-5

Sample 5005

1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas

Subgroup B-6

Sample 5005

1, 7, 9

Group D

Sample 5005

1, 2, 3, 8A, 8B, 9

NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.

READ AND RECORD

Subgroups 1, 2, 3, 9, 10, 11

Subgroups 1, 2 3

CONFORMANCE GROUPS

Group E Subgroup 2

TABLE 7. TOTAL DOSE IRRADIATION

MIL-STD-883

METHOD

TEST

PRE-IRRAD

POST-IRRAD

5005

1, 7, 9

Table 4

READ AND RECORD

PRE-IRRAD

POST-IRRAD

1, 9

Table 4

TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS

OSCILLATOR

FUNCTION

OPEN

GROUND

VDD

9V ± -0.5V

50kHz

25kHz

PART NUMBER CD4011B

Static Burn-In

3, 4, 10, 11

1, 2, 5 - 9, 12, 13

14

1 Note 1

Static Burn-In

2 Note 1

3, 4, 10, 11

7

1, 2, 5, 6, 8, 9,

12 - 14

Dynamic Burn-

-

In Note 1

7

14

3, 4, 10, 11 1, 2, 5, 6, 8, 9, 12,

13

Irradiation

Note 2

3, 4, 10, 11

7

1, 2, 5, 6, 8, 9,

12 - 14

PART NUMBER CD4012B

Static Burn-In

1, 6, 8, 13

2 - 5, 7, 9 - 12

14

1 Note 1

Static Burn-In

2 Note 1

1, 6, 8, 13

7

2 - 5, 9 - 12, 14

Dynamic Burn-

6, 8

7

In Note 1

14

1, 13

2 - 5, 9 - 12

Irradiation

Note 2

1, 6, 8, 13

7

2 - 5, 9 - 12, 14

PART NUMBER CD4023B

Static Burn-In

6, 9, 10

1 - 5, 7, 8, 11 - 13

14

1 Note 1

Static Burn-In

2 Note 1

6, 9, 10

7

1 - 5, 8, 11 - 14

Dynamic Burn-

-

In Note 1

7

14

6, 9, 10

1 - 5, 8, 11 - 13

Irradiation

Note 2

6, 9, 10

7

1 - 5, 8, 11 - 14

NOTE:

1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V

2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD

= 10V ± 0.5V

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