UT28F64 查看數據表（PDF） - Aeroflex UTMC

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比赛名单

UT28F64

Radiation-Hardened 8K x 8 PROM

Aeroflex UTMC 

A(12:0)

CE

OE

DQ(7:0)

tAVAV

tELQX

tELQV

tGLQX

tGLQV

tAVQV

tAVQV

tA X Q X

tEHQZ

tG H Q Z

Figure 2. PROM Read Cycle

RADIATION HARDNESS

The UT28F64 PROM incorporates special design and layout

features which allow operation in high-level radiation

environments. UTMC has developed special low-temperature

processing techniques designed to enhance the total-dose

radiation hardness of both the gate oxide and the field oxide while

maintaining the circuit density and reliability. For transient

radiation hardness and latchup immunity, UTMC builds all

radiation-hardened products on epitaxial wafers using an

advanced twin-tub CMOS process. In addition, UTMC pays

special attention to power and ground distribution during the

design phase, minimizing dose-rate upset caused by rail collapse.

RADIATION HARDNESS DESIGN SPECIFICATIONS 1

Total Dose

Latchup LET Threshold

5.0E5

>128

Memory Cell LET Threshold

>128

Transient Upset LET Threshold

54

Transient Upset Device Cross Section @ LET=128 MeV-cm2/mg

1E-6

Note:

1. The PROM will not latchup during radiation exposure under recommended operating conditions.

rad(Si)

MeV-cm2/mg

MeV-cm2/mg

MeV-cm2/mg

cm 2

5

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