S40D60D 查看數據表（PDF） - Mospec Semiconductor
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S40D60D Datasheet PDF : 2 Pages
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MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal.
These state-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes.
Features
＊Low Forward Voltage.
＊Low Switching noise.
＊High Current Capacity
＊Guarantee Reverse Avalanche.
＊Guard-Ring for Stress Protection.
＊Low Power Loss & High efficiency.
＊150℃ Operating Junction Temperature
＊Low Stored Charge Majority Carrier Conduction.
＊Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
＊In compliance with EU RoHs 2002/95/EC directives
S40D30 Thru S40D60
SCHOTTKY BARRIER
RECTIFIERS
40 AMPERES
30-60 VOLTS
TO-3P
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
S40D
Symbol
30 35 40 45 50 60
VRRM
VRWM
VR
30 35 40 45 50 60
Unit
V
RMS Reverse Voltage
VR(RMS) 21 25 28 32 35 42 V
Average Rectifier Forward Current ( per diode )
Total Device (Rated VR),TC=100℃
IF(AV)
20
40
A
Peak Repetitive Forward Current
(Rate VR, Square Wave, 20kHz)
IFM
40
A
Non-Repetitive Peak Surge Current (Surge
applied at rate load conditions halfware, single IFSM
350
A
phase, 60Hz)
Operating and Storage Junction Temperature
Range
TJ , TSTG
-65 to +150
℃
ELECTRIAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage
( IF =20 Amp TC = 25℃)
( IF =20 Amp TC = 100℃)
Typical Thermal Resistance junction to case
Maximum Instantaneous Reverse Current
( Rated DC Voltage, TC = 25℃)
( Rated DC Voltage, TC = 125℃)
S40D
Symbol
Unit
30 35 40 45 50 60
VF
Rθ j-c
0.55
0.48
1.7
0.70
V
0.62
℃/w
IR
1.0
mA
30
DIM MILLIMETERS
MIN MAX
A 20.63 22.38
B 15.38 16.20
C
1.90 2.70
D
5.10 6.10
E 14.81 15.22
F 11.72 12.84
G 4.20 4.50
H
1.82 2.46
I
2.92 3.23
J
0.89 1.53
K
5.26 5.66
L 18.50 21.50
M 4.68 5.36
N
2.40 2.80
O 3.25 3.65
P
0.55 0.70
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