CY7C1345-117AC 查看數據表（PDF） - Cypress Semiconductor

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CY7C1345-117AC

128K x 36 Synchronous Flow-Through 3.3V Cache RAM

Cypress Semiconductor 

PRELIMINARY

CY7C1345

ZZ Mode Electrical Characteristics

Parameter

Description

Test Conditions

Min

ICCZZ

Snooze mode

standby current

ZZ > VDD − 0.2V

ICCZZ (L Version)

Snooze mode

standby current

ZZ > VDD − 0.2V

tZZS

Device operation to ZZ > VDD − 0.2V

ZZ

tZZREC

ZZ recovery time

ZZ < 0.2V

2tCYC

Capacitance[8]

Parameter

Description

Test Conditions

CIN

Input Capacitance

TA = 25°C, f = 1 MHz,

CI/O

I/O Capacitance

VDD = 5.0V

Note:

8. Tested initially and after any design or process changes that may affect these parameters.

Max

3

800

2tCYC

Unit

mA

µA

ns

ns

Max.

Unit

5.0

pF

8.0

pF

AC Test Loads and Waveforms

OUTPUT

Z0 =50Ω

RL =50Ω

VL =1.5V

(a)

3.3V

OUTPUT

5 pF

INCLUDING

JIG AND

SCOPE

R1=317Ω

3.0V

R2=351Ω

GND

10%

≤ 3.0 ns

(b)

ALL INPUT PULSES

90%

90%

10%

≤ 3.0 ns

8

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