UPD45128163 查看數據表（PDF） - NEC => Renesas Technology

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UPD45128163

128M-bit Synchronous DRAM 4-bank, LVTTL

NEC => Renesas Technology 

µPD45128441, 45128841, 45128163

11.3 Write to Read Command Interval

Write command and Read command interval is also 1 cycle.

Only the write data before Read command will be written.

The data bus must be Hi-Z at least one cycle prior to the first DOUT.

Burst length = 4

T0

T1

T2

T3

T4

T5

T6

T7

T8

CLK

/CAS latency = 2

Command

DQ

WRITE A READ B

Hi-Z

DA1

QB1

QB2

QB3

QB4

/CAS latency = 3

Command

DQ

WRITE A READ B

Hi-Z

DA1

QB1

QB2

QB3

QB4

Data Sheet M12650EJBV0DS00

29

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