BGA425 查看數據表（PDF） - Infineon Technologies

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BGA425

Si-MMIC-Amplifier in SIEGET 25-Technologie

Infineon Technologies 

BGA 425

Insertion power gain |S21|2 = f (f)

Noise figure NF = f (f)

VD, ID = parameter

35

dB

25

20

15

10

5

010 -1

VD=5V, ID=17.5mA

VD=4V, ID=13.3mA

VD=3V, ID=9.5mA

VD=2V, ID=5.2mA

10 0

GHz

10 1

f

VD,ID = parameter

5.0

dB

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.010 -1

Intercept point at the output

IP3out = f (f)

VD,ID = parameter

20

dBm

16

VD=5V, ID=17.5mA

VD=4V, ID=13.3mA

VD=3V, ID=9.5mA

VD=2V, ID=5.2mA

14

12

10

8

6

4

2

010 -1

10 0

GHz

10 1

f

8

VD=5V, ID=17.5mA

VD=3V, ID=9.5mA

10 0

GHz

10 1

f

Oct-12-1999

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