NTE49 查看數據表（PDF） - NTE Electronics

零件编号

产品描述 (功能)

比赛名单

NTE49

Silicon Complementary Transistors General Purpose, High Voltage Amp, Driver

NTE Electronics 

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

OFF Characteristics

Collector–Emitter Breakdown Voltage

Emitter–Base Breakdown Voltage

Collector Cutoff Current

ON Characteristics (Note 2)

V(BR)CEO IC = 1mA, IB = 0

V(BR)EBO IE = 100µA, IC = 0

ICBO VCB = 40V, IE = 0

DC Current Gain

Collector–Emitter Saturation Voltage

Base–Emitter ON Voltage

Small–Signal Characteristics

hFE

VCE(sat)

VBE(on)

IC = 50mA, VCE = 1V

IC = 250mA, VCE = 1V

IC = 500mA, VCE = 1V

IC = 250mA, IB = 10mA

IC = 250mA, IB = 25mA

IC = 250mA, VCE = 5V

Current Gain–Bandwidth Product

fT IC = 250mA, VCE = 5V,

f = 100MHz, Note 1

Output Capacitance

Cob VCB = 10V, IE = 0, f = 100kHz

Min Typ Max Unit

100 – – V

4––V

– – 100 nA

80 125 –

60 100 –

– 55 –

– 0.18 0.4 V

– 0.1 – V

– 0.74 1.2 V

50 150 – MHz

– 6 12 pF

Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

.380 (9.56)

C

.500

(12.7)

1.200

(30.48)

Ref

.300

(7.62)

.180 (4.57)

.132 (3.35) Dia

.325

(9.52)

.070 (1.78) x 45°

Chamf

.050 (1.27)

.400

(10.16)

Min

E BC

.100 (2.54)

.100 (2.54)

Share Link: