NTE2519 查看數據表（PDF） - NTE Electronics

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NTE2519

Silicon Complementary Transistors High Voltage Driver

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Output Capacitance

NTE2519

NTE2520

Cob VCB = 10V, f = 1MHz

– 14 – pF

– 22 – pF

Collector to Emitter Saturation Voltage

NTE2519

NTE2520

VCE(sat) IC = 500mA, IB = 50mA

– 0.13 0.45 V

– 0.2 0.5 V

Base to Emitter Saturation Voltage

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Rise Time

Storage Time

NTE2519

NTE2520

VBE(sat)

V(BR)CBO

V(BR)CEO

V(BR)EBO

ton

tstg

IC = 500mA, IB = 50mA

IC = 10µA, IE = 0

IC = 1mA, RBE = ∞

IE = 10µA, IC = 0

IC = 10A, IB1 = 10A,

IB2 = 700mA, Note 1

– 0.85 1.2 V

180 – – V

160 – – V

6––V

– 0.04 – µs

– 1.2 – µs

– 0.7 – µs

Fall Time

NTE2519

tf

NTE2520

– 0.08 – µs

– 0.04 – µs

Note 1. Pulse Width = 20µs, Duty Cycle ≤ 1%.

.315 (8.0)

.130

(3.3)

.118 (3.0)

Dia

.295

(7.5)

EC B

.433

(11.0)

.610

(15.5)

.094 (2.4)

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