NTE2528 查看數據表（PDF） - NTE Electronics

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NTE2528

Silicon Complementary Transistors High Voltage Switch

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Base–Emitter Saturation Voltage

Collector–Base Breakdown Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Breakdown Voltage

Turn–On Time

Storage Time

NTE2528

NTE2529

VBE(sat) IC = 500mA, IB = 50mA

– 0.85 1.2 V

V(BR)CBO IC = 10µA, IE = 0

180 – – V

V(BR)CEO IC = 1mA, RBE = ∞

160 – – V

V(BR)EBO IE = 10µA, IC = 0

6 – –V

ton VCC = 100V, VBE = –5V,

– 60 – ns

tstg

10IB1 = –10IB2 = IC = 700mA,

Pulse Width = 20µs,

Duty Cycle ≤ 1%, Note 1

–

1.2

–

ns

– 0.7 – ns

Fall Time

tf

NTE2528

– 80 – ns

NTE2529

– 50 – ns

Note 1. For NTE2529, the polarity is reversed.

.256 (6.5)

.197 (5.0)

.090 (2.3)

.059 (1.5)

.275

(7.0)

BCE

.295

(7.5)

.090 (2.3)

.002 (0.5)

.002(0.5)

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