NTE2511 查看數據表（PDF） - NTE Electronics

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NTE2511

Silicon Complementary Transistors High Frequency Video Output for HDTV

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector Emitter Saturation Voltage

NTE2511

NTE2512

VCE(sat)

IC = 100mA, IB = 10mA

– – 0.6 V

– – 0.8 V

Base Emitter Saturation Voltage

Collector Base Breakdown Voltage

Collector Emitter Breakdown Voltage

Emitter Base Breakdown Voltage

Output Capacitance

NTE2511

NTE2512

VBE(sat) IC = 100mA, IB = 10mA

V(BR)CBO IC = 10µA, IE = 0

V(BR)CEO IC = 1mA, RBE = ∞

V(BR)EBO IE = 100µA, IC = 0

Cob

VCB = 30V, f = 1MHz

– – 1.0 V

80 – – V

60 – – V

4––V

– 3.4 – pF

– 5.2 – pF

Reverse Transfer Capacitance

NTE2511

NTE2512

Cre

VCB = 30V, f = 1MHz

– 2.9 – pF

– 4.6 – pF

.450

(11.4)

Max

.330 (8.38)

Max

.175

(4.45)

Max

.655

(16.6)

Max

EC B

.118 (3.0)

Dia

.030 (.762) Dia

.130 (3.3)

Max

.090 (2.28)

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