NTE5460 查看數據表（PDF） - NTE Electronics

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NTE5460

Silicon Controlled Rectifier (SCR)

NTE Electronics 

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Peak Forward Blocking Current

Peak Reverse Blocking Current

Forward “ON” Voltage

DC Gate Trigger Current

DC Gate Trigger Voltage

Gate Non–Trigger Voltage

Holding Current

Turn–On Time

Turn–Off Time

Critical Rate of Rise of

Off–State Voltage

IDRM

IRRM

VTM

IGT

VGT

VGD

IH

tgt

tq

dv/dt

VDRM = 800V, TJ = +25°C

VDRM = 800V, TJ = +125°C

VRRM = 800V, TJ = +125°C

– – 10 µA

– – 2 mA

– – 2 mA

ITM = 50A, Note 3

Anode Voltage = 12V, RL = 100Ω

Anode Voltage = 12V, RL = 100Ω

Anode Voltage = 800V, RL = 100Ω, TJ = +125°C

– – 1.8 V

– – 40 mA

– 0.8 1.5 V

0.2 – – V

Anode Voltage = 12V

– 20 40 mA

ITM = 25A, IGT = 40mA

– 1.5 – µs

VDRM = 800V, ITM = 25A, IR = 25A

– 15 – µs

VDRM = 800V, ITM = 25A, IR = 25A, TJ = +125°C – 35 – µs

Gate Open, VDRM = 800V, Exponential Waveform – 100 – V/µs

Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

.402 (10.2) Max

.224 (5.7) Max

.295

(7.5)

.669

(17.0)

Max

.122 (3.1)

Dia

.165

(4.2)

.173 (4.4) Max

.114 (2.9) Max

KA G

.531

(13.5)

Min

.100 (2.54)

.059 (1.5) Max

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