NTE2510 查看數據表（PDF） - NTE Electronics

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NTE2510

Silicon NPNTransistor High Frequency Video Output

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Output Capacitance

Reverse Transfer Capacitance

Collector–Emitter Saturation Voltage

Base–Emitter Saturation Voltage

Cob

Cre

VCE(sat)

VBE(sat)

VCB = 10V, f = 1MHz

VCB = 10V, f = 1MHz

IC = 300mA, IB = 30mA

IC = 300mA, IB = 30mA

– 6.0 – pF

– 4.6 – pF

– 0.3 0.8 V

– 0.9 1.2 V

.315 (8.0)

.118 (3.0)

Dia

.295

(7.5)

EC B

.433

(11.0)

.610

(15.5)

.130

(3.3)

.094 (2.4)

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