NTE486 查看數據表（PDF） - NTE Electronics

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NTE486

Silicon NPN Transistor RF High Frequency Amplifier

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Dynamic Characteristics

Current Gain–Bandwidth Product

fT

VCE = 10V, IC = 100mA, f = 200MHz 1800 2000 – MHz

Output Capacitance

Functional Tests

Cob VCB = 12.5V, IE = 0, f = 1MHz

–

3.5 4.0 pF

Common–Emitter Amplifier Power Gain

Collector Efficiency

GPE VCC = 12.5V, PO = 0.75W,

h

f = 470MHz

8.0 8.5

50 70

– dB

–%

Series Equivalent Input Impedance

Zin

Series Equivalent Output Impedance

Zout

– 14+j4.0 – Ω

– 28–j38 – Ω

.260 (6.6)

Max

.370 (9.39) Dia Max

.355 (9.03) Dia Max

.500 (12.7)

Min

Emitter

45°

.018 (0.45) Dia

Base

Collector/Case

.031 (.793)

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