U2407B 查看數據表（PDF） - Temic Semiconductors

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U2407B

Simple Controller for Fast Charge Systems

Temic Semiconductors 

U2407B

Temperature Control, Figure 7

When the battery temperature is not inside the specified

temperature windows, the overal temperature control will

not allow the charge process. Sensor short circuit or

interruption also leads to switch-off (faulty mode).

A permanent switch-off follows after a measurement

period of 20.48 s, if the temperature exceeds a specified

level, which is denoted by a status of LED1. A charge

sequence will start only when the specified window

temperature range is attained.

The temperature window is specified between two

voltage transitions. The upper voltage transition is

specified by the internal reference voltage of 4 V, and the

lower voltage transition is represented by the external

voltage divider resistances RT2 and RT3.

NTC sensors are normally used to control the temperature

of the battery pack. If the resistance values of NTC are

known for maximum and minimum conditions of

allowable temperature, then other resistance values, RT1,

RT2 and RT3 are calculated as follows:

W suppose RT2 = 100 k , then

+ RT1

RNTCmax

VRef –

4V

4V

+ RT3

RNTCmin

RT2

RT1

If NTC sensors are not used, then select the circuit

configuration according to figure 10.

VRef

RT1

NTC

sensor

VRef

13

RT2

Tmax

7

RT3

7V

Sensor

8

7V

+

–

VRef = 4 V

+

–

Figure 7. Temperature window

High

temperature

Low

temperature

95 10622

Current Regulation

The charge concept requires a constant charge current

supply outside of the circuit. This is achieved by an

external switchable current source or by an internal error

amplifier regulation of an externally situated power

stage.

Charge Current Regulation, Figure 2

According to figure 2 the operational amplifier (OpAmp)

regulates the charge current, Ich (= 160 mV/ Rsh), aver-

age value. The OpAmp detects the voltage drop across the

shunt resistor (Rsh) at input Pin 5 as an actual value. The

actual value will then be compared with an internal refer-

ence value of 160 mV.

8 (16)

TELEFUNKEN Semiconductors

Rev. A3, 05-Mar-97

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