TISP4165H4BJ 查看數據表（PDF） - Power Innovations
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TISP4165H4BJ Datasheet PDF : 14 Pages
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TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4360H4BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED MARCH 1999
electrical characteristics for the T and R terminals, TA = 25°C (unless otherwise noted)
IDRM
PARAMETER
Repetitive peak off-
state current
V(BO) Breakover voltage
Impulse breakover
V(BO) voltage
I(BO)
VT
IH
dv/dt
ID
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
Coff Off-state capacitance
VD = ±VDRM
TEST CONDITIONS
dv/dt = ±750 V/ms, RSOURCE = 300 Ω
dv/dt ≤ ±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
dv/dt = ±750 V/ms, RSOURCE = 300 Ω
IT = ±5 A, tW = 100 µs
IT = ±5 A, di/dt = +/-30 mA/ms
MIN TYP
TA = 25°C
TA = 85°C
‘4165
‘4180
‘4200
‘4265
‘4300
‘4360
‘4165
‘4180
‘4200
‘4265
‘4300
‘4360
±0.15
±0.225
Linear voltage ramp, Maximum ramp value < 0.85VDRM
±5
VD = ±50 V
f = 100 kHz, Vd = 1 V rms, VD = 0,
f = 100 kHz, Vd = 1 V rms, VD = -1 V
f = 100 kHz, Vd = 1 V rms, VD = -2 V
f = 100 kHz, Vd = 1 V rms, VD = -50 V
f = 100 kHz, Vd = 1 V rms, VD = -100 V
TA = 85°C
‘4165 thru ‘4200
80
‘4265 thru ‘4360
70
‘4165 thru ‘4200
71
‘4265 thru ‘4360
60
‘4165 thru ‘4200
65
‘4265 thru ‘4360
55
‘4165 thru ‘4200
30
‘4265 thru ‘4360
24
‘4165 thru ‘4200
28
‘4265 thru ‘4360
22
MAX
±5
±10
±165
±180
±200
±265
±300
±360
±174
±189
±210
±276
±311
±373
±0.8
±3
±0.8
±10
90
84
79
67
74
62
35
28
33
26
UNIT
µA
V
V
A
V
A
kV/µs
µA
pF
thermal characteristics
PARAMETER
RθJA Junction to free air thermal resistance
TEST CONDITIONS
EIA/JESD51-3 PCB, IT = ITSM(1000),
TA = 25 °C, (see Note 6)
265 mm x 210 mm populated line card,
4-layer PCB, IT = ITSM(1000), TA = 25 °C
MIN TYP MAX UNIT
113
°C/W
50
NOTE 6: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
PRODUCT INFORMATION
3
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