A1193 查看數據表（PDF） - Hitachi -> Renesas Electronics
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A1193 Datasheet PDF : 6 Pages
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2SA1193(K)
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
iC(peak)
PC
Tj
Tstg
Ratings
Unit
–60
V
–60
V
–7
V
–0.5
A
–1.0
A
0.9
W
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to emitter breakdown V(BR)CEO –60 —
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
I CBO
I EBO
hFE
VCE(sat)
—
—
—
—
2000 —
—
—
Base to emitter saturation
VBE(sat)
—
—
voltage
Turn on time
Turn off time
Note: 1. Pulse test
t on
—
0.3
t off
—
0.9
Max Unit
—
V
–1.0 µA
–1.0 µA
—
–1.5 V
–2.0 V
—
µs
—
µs
Test conditions
IC = –1 mA, RBE = ∞
VCB = –60 V, IE = 0
VEB = –7 V, IC = 0
VCE = –3 V, IC = –250 mA*1
IC = –250 mA, IB = –0.5 mA*1
IC = –250 mA
IB1 = –IB2 = –0.5 mA
2
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